High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics

High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics

Although wrap-gated nanowire field-effect-transistors (NWFETs) have been explored as an ideal electronic device geometry for low-power and high-frequency applications, further performance enhancement and practical implementation are still suffering from electron scattering on nanowire surface/interface traps between the nanowire channel and gate dielectric as well as the complicated device fabr...

High-performance nanowire field-effect transistors

Semiconductor nanowires (NWs) 1, 2 have attracted significant interest because of their potential for a variety of different applications, including logic and memory circuitry, photonics devices, and chemical and biomolecular sensors. 3–6 Although many different types of semiconductor NW have been investigated, silicon NWs have become prototypical nanowires because they can be readily prepared,...

Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors

Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22033, Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, School of Physics, Astronomy, and Computational Sciences, George Mason University, Fairfax, VA 22033, Materials Science and Engineering Division, National Institute of Standards an...

Stochastic Resonance in Schottky Wrap Gate-controlled GaAs Nanowire Field-Effect Transistors and Their Networks

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary m...